<i>In-plane</i> lattice orientation in aluminum scandium nitride epitaxial films deposited on Nb-doped SrTiO<sub>3</sub>(111) substrates via reactive magnetron sputtering
نویسندگان
چکیده
Wurtzite-type aluminum scandium nitride [WZ-(Al1−xScx)N] thin films were grown on 0.5 wt % Nb-doped SrTiO3(111) (Nb:STO) single crystal substrates using the radio frequency reactive magnetron sputtering method with Al and Sc targets. WZ-(Al1−xScx)N 0 ≤ x 0.49 epitaxially Nb:STO substrates. Films 0.3 exhibited multi-domain in-plane orientation. The coexistence of two rotation domains, (Al,Sc)N[100]//Nb:STO[110] (Al,Sc)N[100]//Nb:STO[112], was observed. abundance these domains varied x, > single-crystal-like single-domain films. Although lattice parameters domain structure intricately changed calculated unit cell volume in accordance Vegard’s law. These results indicate that is determined by chemical composition.
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ژورنال
عنوان ژورنال: Journal of the Ceramic Society of Japan
سال: 2023
ISSN: ['1882-0743', '1348-6535']
DOI: https://doi.org/10.2109/jcersj2.23002